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KSD5707
KSD5707
High Voltage Color Display Horizontal Deflection Output
* High Collector - Base Voltage : VCBO = 1500V * High Speed Switching tF = 0.4s (Max.)
1
TO-3PF 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 1500 800 6 6 16 60 150 - 55 ~ 150 Units V V V A A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT tF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Fall Time Test Condition VCB= 800V, IE= 0 VEB= 5V, IC= 0 VCE= 5V, IC= 1A VCE= 5V, IC= 3A IC= 4A, IB= 0.8A IC= 4A, IB= 0.8A VCE= 10V, IC= 1A VCC=200V, IC=4A, IB1= 0.8A, IB2= -1.6A RL=50 3 0.4 10 5 2 Min. Typ. Max. 10 1 30 15 5 1.5 V V MHz s Units A mA
Thermal Characteristics
Symbol Rjc Thermal Resistance Characteristics Junction to Case Rating 2.08 Unit C/W
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
KSD5707
Typical Characteristics
10
100
VCE = 5V
IC[A], COLLECTOR CURRENT
8
IB = 2.0A
6
1.8A 1.6A 1.4A
1.2A 1.0A 800mA
hFE, DC CURRENT GAIN
10
4
600mA 400mA
2
IB = 200mA
0 0
2
4
6
8
10
1 0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
8
VCE(sat)[V], SATURATION VOLTAGE
IC = 5 I B
VCE = 5V
7
IC[A], COLLECTOR CURRENT
1 10
6
1
5
4
3
0.1
2
1
0.01 0.1
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
100
ICP
SINGLE PULSE TC=25 100us 300us
tSTG, tF [s], TURN OFF TIME
IC[A], COLLECTOR CURRENT
10
tSTG
1
10ms 1ms
1
0.1
tF
DC OPERATING
0.1
IC = 4A IB1 = 0.8A VCC = 200V
0.01 0.1 1 10
0.01 1 10 100 1000 10000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
KSD5707
Typical Characteristics (Continued)
100
80
IB2 = -IA,Constant @ IC > 5A
70
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
100 1000 10000
60
10
50
40
30
1
20
IC = 5IB1 = - 5IB2 L = 500H SINGLE PULSE
0.1 10
10
0 0 25 50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
KSD5707
Package Demensions
TO-3PF
5.50 0.20
4.50 0.20
15.50 0.20
o3.60 0.20
3.00 0.20 (1.50)
10.00 0.20
10
26.50 0.20
23.00 0.20
16.50 0.20
14.50 0.20
0.85 0.03
16.50 0.20
2.00 0.20
14.80 0.20
2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10
+0.20
2.00 0.20
2.50 0.20
2.00 0.20
3.30 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.90 -0.10
+0.20
3.30 0.20
2.00 0.20
5.50 0.20
1.50 0.20
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
22.00 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. E

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